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Flashcards in Dram_110S Deck (19):
1

Describe the 20 mask pattern in the array?

Discrete contacts for the purpose of separating active are.

2

Thickness of the what film defines the array STI trench CD?

21 array nitride

3

Which mask level is used for the access device implants?

Aw (array well)

4

what is the purpose of the 18 mask?

To remove the 29 nitride in the periphery, so CMOS transistor can be formed.

5

What mask levels are used to dope the gate poly for the CMOS transistors?

N+ poly is doped at PW mask P+ poly is doped at NW mask

6

What is the primary purpose of the channel implants?

To set the Vt's of the CMOS transistros.

7

what films protects the array during 53 gate formation?

53 Nitride

8

What is the purpose of Carbon implants?

Minimize dopant diffusion

9

What is the purpose of the new 3S source/drain implant?

Provide additional S/D doping for low voltage NMOS devices.

10

What are the two 45 contacts at the edge of the array?

Wordline contacts and Digitline contacts.

11

What 45 contacts do not form CoSi2 after 45 Co RTP?

Wordline Contacts.

12

What two implants are used to minimize active area contact resistance in the periphery?

45 Contact Blanket P (N+) 09 P+ BC(P+)

13

What does RDL Stands for?

Redistribution Layer

14

How many nitride lattice layers are needed for 110 series?

Three

15

What method is used to isolate 42 TiN containers from each other?

42 Container Metal CMP

16

How are the 26 nitried layers prevented from depositing inside the containers?

"Breadloaf" deposition at CVD.

17

What is the conductive material in 65 Vias?

Copper from 92 metal deposition (dual Damascene)

18

What is the primary material in BLoK layers?

Silicon Carbide (SiC)

19

What is the purpose of the Tantalum layer in a Damascene process?

Prevents the copper diffusion and helps to stop the copper CMP process.