Solar - PV Junctions Flashcards

1
Q

How is voltage difference allowed in PV?

A

Breaking of the symmetry in the crystal structure.

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2
Q

Doping

A

Introduces impurities to generate PV junctions…

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3
Q

Types of Doping

A

Substituinal Impurities
Interstital Impurities

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4
Q

What are n and p-type doping?

A

Introduction of column 3 and group 5 elements into the silicon structure.

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5
Q

N-Type Doping

A

This is the addition of say phosphorous or arsenic, with one extra electron in their shell not participating in binding.

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6
Q

P Type Doping

A

This refers to introudction of elements with one less electron

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7
Q

N Type Doping features…

A

Little energy required to boost into conduction band, electron being weakly obund to nucleus

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8
Q

Introducing elements with one less electrno…

A

Opposite effect on fermi level, not being sufficient bonding to four adjacent atoms

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9
Q

Analogy of P-Type Doping

A

One of the neighbouring atoms thought of as having a hole of which valence band electrons can be easily excited

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10
Q

How is asymmetry generated in a crystal lattice?

A

Combining p and n type doping where electrons move readily between fermi level and conducting/valence bands

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11
Q

P-Junction

A

This is where the P-Type and N-type doping are next to each other.

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12
Q

When does the diffusion current form?

A

When the negative charge carriers(electrnos) travel from n type through thermal motion into p-type, where holes positvie charge carriers travel into n junctions

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13
Q

When are depletion regions formed?

A

Where density of majority carriers is small having opposite net charges of their original.

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14
Q

Boltzmann Factor

A

This indicates competition between the hcarging energy and the thermal energy.

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15
Q

What causes the boltmann factor?

A

Random thermal motion from n type to p type and vice versa…

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16
Q

Mechanism of ejection of electrions from valence to conduction bands….

A

Electromagnetic radiation illumination

17
Q

Photodiode

A

A semi-conductor-based light sensitive element, generating currents proportional to illumination of the PN junctions

18
Q

If rceominbaiton is not so fast…

A

Electromagnetic radiation increases mobile electron amount in P-region, finding way to interface region, pushed into r region

19
Q

How does PN junction act as a photodiode?

A

Holes moving from n to p region.

20
Q

Why in band gap ecitation is Egap provided to external circuitnot exactly E gap?

A

Limits to efficienc based on voltage-current characterisitcs of photodiodes and recmobination

21
Q

Shockley-Queisser Limit

A

THe maximum light to electric power conversion efficiency of a single junction solar cell for a given illumination spectrum

22
Q

Open Circuit Voltage

A

This is the maximum voltage available from a solar cell.

23
Q

Short Circuit Current

A

This is the current through the solar cell when voltage across the solar cell is zero.

24
Q

How can OCV be described…

A

Potential shift needed to allign fermi levels of the n and p type regions.