Lecture 2

Question 1

An electronic component created by “joining” an n-type material with a p-type material.

Answer 1

Semiconductor diode

Question 2

The region of uncovered positive and negative ions is called

Answer 2

Depletion region

Question 3

An internal contact that cannot be measured directly, its effects can be overcome by applying an external voltage of 0.3 V for Ge or 0.7 V for Si, in the correct polarity.

Answer 3

Vb

Question 3

Vb ___ at higher temperature.

Answer 3

decreases

Question 4

A semiconductor device with a single pn junction that conducts current in only one direction.

Answer 4

Diode

Question 5

A two-terminal semiconductor device formed by two doped regions of silicon separated by a pn junction.

Answer 5

Modern Diode

Question 6

Made from a small piece of
semiconductor material, usually Si, in which half is doped as a p region and half is doped as an n region with a PN junction and depletion region in between.

Answer 6

Diode

Question 7

The p region is called the___ and is
connected to a conductive terminal.

Answer 7

Anode

Question 8

The n region is called the ____ and is connected to a second conductive terminal

Answer 8

Cathode

Question 9

A diode has three operating conditions which are ___

Answer 9

No bias, forward bias, and reverse bias

Question 10

There is no applied voltage across the diode

Answer 10

No bias

Question 11

It is established by applying the positive potential to the p-type
material and the negative potential to the n-type material.

Answer 11

Forward bias

Question 12

It is stablished by applying external potential of V volts across the p-n junction such that the positive terminal is connected to the n-type material and the negative terminal is connected to the p-type material.

Answer 12

Reverse bias

Question 13

When a diode is forward biased, the resistance of the diode is ____ and
there could be significant current flow across the diode depending on
the applied voltage across the terminals of the diode.

Answer 13

low

Question 14

The voltage across a forward biased diode is no greater than __ volt.

Answer 14

1

Question 15

When the anode of the diode is made negative with respect to the cathode, the diode is said to be

Answer 15

Reverse biased

Question 16

The term ________ comes from the
fact that it reaches the maximum value quickly and does not change
significantly with increase in the reverse bias potential.

Answer 16

“saturation”

Question 17

It is also called as Avalanche Breakdown and Zener
Breakdown

Answer 17

Reverse Breakdown

Question 18

The multiplication of conduction electrons

Answer 18

Avalanche effect

Question 19

it is applied when the diode is
forward or reverse
biased except when the
diode enters the Zener
region (diode current
rises abruptly).

Answer 19

Diode equation

Question 20

The application of a ______ to a circuit containing a semiconductor diode will result in an operating point on the characteristic curve that will not change with time.

Answer 20

DC voltage

Question 21

If the input signal is sufficiently large to produce a broad swing such as indicated in the figure, the resistance associated with the device for this region is called the

Answer 21

Average AC Resistance

Question 22

It is the resistance determined by a straight line drawn between the two intersections established by the maximum and minimum values of input voltage.

Answer 22

Average AC Resistance

Question 23

It is a perfect two-state device that exhibits zero impedance when forward biased and infinite impedance when reversed biased.

Answer 23

Ideal Diode Model

Question 24

The real world diode rises at ___ V rather than 0 V

Answer 24

0.7

Question 25

The resulting equivalent circuit is
called

Answer 25

piecewise-linear equivalent
circuit

Question 26

The condition of a diode can be determined quickly using a

Answer 26

Digital display meter (DDM) / Digital Multimeter (DMM), Ohmmeter section of a multimeter, Curve Tracer