LUH Flashcards

1
Q

transistor configuration that has the highest input resistance

A

common collector

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2
Q

The advantage of common emitter is __________

A

high voltage gain

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3
Q

The current in FET flows between ________ terminals

A

Drain and Source

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4
Q

For operation as an amplifier, the base of an NPN transistor must be

A

negative with respect to the emitter

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5
Q

The Alpha of a transistor is its current gain at

A

Common base

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6
Q

For the transistor, the arrow in the graphic symbol defines the direction of ______ through the device

A

emitter conventional current flow

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7
Q

The three regions in a bipolar junction transistor is separated by

A

two PN junctions

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8
Q

Identify the process where a smaller signal is used to produce a larger identical signal

A

amplification

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9
Q

The flow of electron in an NPN transistor when used in electronic circuit is from

A

emitter to collector

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10
Q

In a common collector amplifier, the input resistance is

A

high

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11
Q

What are the terminals of FET

A

Source, gate and drain

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12
Q

For the operation as an amplifier, the base of a PNP transistor must be

A

negative with respect to the emitter

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13
Q

In common base amplifier, the voltage gain is

A

high

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14
Q

In semiconductor technology, the characteristics of a transistor in cut-off refers to a condition when

A

no current flows from emitter to collector

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15
Q

The term used to express the ratio change in dc collector current to a change in base current in a bipolar transistor is

A

Beta

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16
Q

The BJT has how many PN Junctions

A

Three

17
Q

Which are the three terminals of a bipolar junction transistor

A

base, collector and emitter

18
Q

The Beta of a transistor is its current gain at

A

common emitter

19
Q

A two junction transistor whose construction takes the form of a PNP or an NPN. Such device uses both electron and hole conduction and is current-driven

A

bipolar transistor

20
Q

When made to operate in cut-off and saturation, the transistor is acting like

A

a switch

21
Q

Which one is a unipolar device

A

FET

22
Q

The voltage across the forward-biased BE Junction of a silicon BJT is

A

0.7 v

23
Q

What bias condition must exist for a transistor to operate in cut-off

A

Forward-Reverse Bias

24
Q

The value of VCE in cut-off is

A

equal to VCC

25
Q

In the dc mode, the levels of IC are related by the quantity called

A

B

26
Q

How many terminals does the FET transistor have

A

3

27
Q

The Gamma of a transistor is its current gain at

A

common collector

28
Q

In the dc mode, the levels of IC and IE are related by the quantity called

A

a

29
Q

The region in a transistor that heavily doped is called

A

emitter

30
Q

The region in a bipolar transistor that is lightly doped and very thin

A

base