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ece > m2 - chap 3 > Flashcards

m2 - chap 3 Flashcards

1
Q

In what decade was the first transistor created?

A) 1930s
B) 1940s
C) 1950s
D) 1960s

A

B) 1940s

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2
Q

How many layers of material does a transistor have?

A) 1
B) 2
C) 3
D) 4

A

C) 3

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3
Q

What is the ratio of the total width to that of the center layer for a transistor?

A) 1:15
B) 1:150
C) 15:1
D) 150:1

A

D) 150:1

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4
Q

Which of the following is (are) the terminal(s) of a transistor?

A) Emitter
B) Base
C) Collector
D) All of the above

A

D) All of the above

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5
Q

List the types of bipolar junction transistors.

A) ppn, npn
B) pnp, npn
C) npp. ppn
D) nnp. pnp

A

B) pnp, npn

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6
Q

Transistors are _____-terminal devices.

A) 2
B) 3
C) 4
D) 5

A

B) 3

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7
Q

How many carriers participate in the injection process of a unipolar device?

A) 1
B) 2
C) 0
D) 3

A

A) 1

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8
Q

Which component of the collector current lc is called the leakage current?

A) Majority
B) Independent
C) Minority
D) None of the above

A

C) Minority

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9
Q

For a properly biased pnp transistor, let lc = 10 mA and IE = 10.2 mA. What is the level of Ig?

A) 0.2 A
B) 200 mA
C) 200 μA
D) 20.2 mA

A

C) 200 μA

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10
Q

Calculate minority current Ico if IC = 20.002 mA and Ic majority = 20 mA.

A) 2 µA
B) 0.002 µA
C) 2 nA
D) 2 PA

A

A) 2 µA

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11
Q

Which of the following regions is (are) part of the output characteristics of a transistor?

A) Active
B) Cutoff
C) Saturation
D) All of the above

A

D) All of the above

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12
Q

In which region are both the collector-base and base-emitter junctions forward-biased?

A) Active
B) Cutoff
C) Saturation
D) All of the above

A

C) Saturation

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13
Q

How much is the base-to-emitter voltage of a transistor in the “on” state?

A) 0 V
B) 0.7 V
C) 0.7 mV
D) Undefined

A

B) 0.7 V

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14
Q

In the active region, while the collector-base junction is ______-biased, the base-emitter is ______-biased.

A) forward, forward
B) forward, reverse
C) reverse, forward
D) reverse, reverse

A

C) reverse, forward

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15
Q

What is ẞdc equal to?

A) IB / IE
B) IC / IE
C) IC / IB
D) None of the above

A

C) IC / IB

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16
Q

What are the ranges of the ac input and output resistance for a common-base configuration?

Α) 10 Ω-100 Ω, 50 ΚΩ-1 ΜΩ
Β) 50 ΚΩ-1 ΜΩ, 10 Ω-100 Ω
C) 10 Ω-100 ΚΩ, 50 Ω-1 ΚΩ
D) None of the above

A

Α) 10 Ω - 100 Ω, 50 ΚΩ -1 ΜΩ

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17
Q

For what kind of amplifications can the active region of the common-emitter configuration be used?

A) Voltage
B) Current
C) Power
D) All of the above

A

D) All of the above

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18
Q

Use this table of collector characteristics to calculate Bac at VCE = 15 V and IB = 30 µA.

A) 100
B) 106
C) 50
D) 400

A

A) 100

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19
Q

Calculate ẞdc at VCE = 15 V and IB = 30 μA.

A) 100
B) 116
C) 50
D) 110

A

D) 110

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20
Q

Which of the following configurations can a transistor set up?

A) Common-base
B) Common-emitter
C) Common-collector
D) All of the above

A

D) All of the above

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21
Q

Determine the value of a when ẞ = 100.

A) 1.01
B) 101
C) 0.99
D) Cannot be solved with the information provided

A

C) 0.99

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22
Q

What is the most frequently encountered transistor configuration?

A) Common-base
B) Common-collector
C) Common-emitter
D) Emitter-collector

A

C) Common-emitter

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23
Q

Bdc for this set of collector characteristics is within

A) 2
B) 5
C) 7
D) 10

A

D) 10

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24
Q

Bdc =

A) IB / IE
B) IC / IE
C) IC / IB
D) None of the above

A

C) IC / IB

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25
Q

What is (are) the component(s) of most specification sheets provided by the manufacturer?

A) Maximum ratings
B) Thermal characteristics
C) Electrical characteristics
D) All of the above

A

D) All of the above

26
Q

What is (are) the component(s) of electrical characteristics on the specification sheets? TABLE)

A) On
B) Off
C) Small-signal characteristics
D) All of the above

A

D) All of the above

27
Q

Most specification sheets are broken down into

A) maximum ratings
B) thermal characteristics
C) electrical characteristics
D) All of the above

A

D) All of the above

28
Q

An example of a pnp silicon transistor is a 2N4123.

A) True
B) False

A

B) False

29
Q

Which of the following equipment can check the condition of a transistor?

A) Current tracer
B) Digital display meter (DDM)
C) Ohmmeter (VOM)
D) All of the above

A

D) All of the above

30
Q

Which of the following can be obtained from the last scale factor of a curve tracer?

A) hFE
B) adc
C) aac
D) Bac

A

D) Bac

31
Q

Calculate Bac for IC = 15 mA and VCE = 5 V.

A) 200
B) 180
C) 220
D) None of the above

A

A) 200

32
Q

What range of resistor values would you get when checking a transistor for forward- and reverse- biased conditions by an ohmmeter?

A) 100 to a few kΩ, exceeding 100 kΩ
B) Exceeding 100 kΩ, 100 Ω to a few kΩ
C) Exceeding 100 kΩ, exceeding 100 kΩ
D) 100 Ω to a few ΚΩ, 100 Ω to a few ΚΩ

A

A) 100 to a few kΩ, exceeding 100 kΩ

33
Q

What does a reading of a large or small resistance in forward- and reverse-biased conditions indicate when checking a transistor using an ohmmeter?

A) Faulty device
B) Good device
C) Bad ohmmeter
D) None of the above

A

A) Faulty device

34
Q

A transistor can be checked using a(n)

A) curve tracer
B) digital meter
C) ohmmeter
D) Any of the above

A

D) Any of the above

35
Q

How many individual pnp silicon transistors can be housed in a 14-pin plastic dual-in-line package?

A) 4
B) 7
C) 10
D) 14

A

A) 4

36
Q

All amplifiers should have at least _____ terminals with _____ terminal(s) controlling the flow between other ______ terminal(s).

A) 2, 1, 1
B) 3, 1, 2
C) 3, 2, 1
D) 3, 0, 3

A

B) 3, 1, 2

37
Q

The outer layers of a transistor are _________ the sandwiched layer.

A) much smaller than
B) the same as
C) much larger than
D) None of the above

A

C) much larger than

38
Q

The doping of the sandwiched layer is _______ that of the outer layers.

A) considerably less than
B) the same as
C) considerably more than
D) None of the above

A

A) considerably less than

39
Q

The lower doping level _______ the conductivity and ______ the resistivity of the material.

A) increases, decreases
B) increases, increases
C) decreases, decreases
D) decreases, increases

A

D) decreases, increases

40
Q

The term bipolar reflects the fact that _____ and ____ participate in the injection process into the oppositely polarized material.

A) holes, neutrons
B) holes, electrons
C) neutrons, electrons
D) None of the above

A

B) holes, electrons

41
Q

One p-n junction of a transistor is ____-biased and the other one is _____-biased in the active region.

A) reverse, reverse
B) forward, forward
C) reverse, forward
D) None of the above

A

C) reverse, forward

42
Q

The magnitude of the base current is typically on the order of as compared to for the emitter.

A) µA, µA
B) µA, mA
C) mA, µA
D) mA, mA

A

B) µA, mA

43
Q

The base current is the _____ of the emitter and collector currents.

A) sum
B) difference
C) product
D) None of the above

A

B) difference

44
Q

The ________ region is the region normally employed for linear (undistorted) amplifiers.

A) active
B) cutoff
C) saturation
D) All of the above

A

A) active

45
Q

In the cutoff region the collector-base junction is _______-biased and the base-emitter junction is _______-biased for a transistor.

A) reverse, forward
B) forward, reverse
C) reverse, reverse
D) forward, forward

A

C) reverse, reverse

46
Q

In the saturation region the collector-base junction is _____-biased and the base-emitter junction is _______-biased for a transistor.

A) reverse, forward
B) forward, reverse
C) reverse, reverse
D) forward, forward

A

D) forward, forward

47
Q

For practical transistors the level of alpha typically extends from _____ to _____ with most approaching the higher end of the range.

A) 0.0, 1
B) 0.90, 0.998
C) 50, 400
D) None of the above

A

B) 0.90, 0.998

48
Q

Typical values of voltage amplification for the common-base configurations vary from _______ and the current gain is always _______

A) less than 1, 50 to 300
B) 50 to 300, larger than 1
C) 50 to 300, less than 1
D) larger than 1, 50 to 300

A

C) 50 to 300, less than 1

49
Q

If a value of beta.gif is specified for a particular transistor configuration it will normally be used for ________ calculations.

A) ac
B) dc
C) ac and dc
D) None of the above

A

C) ac and dc

50
Q

The common-collector configuration has a ____ input impedance and a ______ output impedance.

A) Low, high
B) high, low
C) high, high
D) low, low

A

B) high, low

51
Q

The active region of a transistor is bounded by the

A) cutoff region
B) saturation region
C) power dissipation curve
D) All of the above

A

D) All of the above

52
Q

The “on” and “off” characteristics refer to _____ limits while the small-signal characteristics indicate the parameters of importance to ________ operation.

A) ac, dc
B) dc, ac
C) ac, dc and ac
D) dc and ac, dc

A

B) dc, ac

53
Q

The step function (per step) of a curve tracer reveals the scale for

A) collector current IC
B) VCE voltage
C) base current IB
D) All of the above

A

C) base current IB

54
Q

The level of _____ is determined and displayed by advanced digital meters.

A) VCE
B) IB
C) IC
D) Bdc

A

D) Bdc

55
Q

The level of _____ is determined and displayed by advanced digital meters if using diode-testing mode.

A) VBE
B) IC
C) IB
D) IE

A

A) VBE

56
Q

When checking a transistor by ohmmeter, a relatively _______ resistance is displayed for a forward-biased junction and _______ resistance for a reverse-biased junction.

A) Low, very high
B) low, low
C) high, high
D) high, very low

A

A) Low, very high

57
Q

An OL indication on an advanced digital meter indicates _______ while checking a transistor.

A) forward bias
B) reverse bias
C) definitely a defective transistor
D) None of the above

A

B) reverse bias

58
Q

If the positive lead of an ohmmeter is connected to the base and the negative lead to the emitter, a low resistance reading would indicate a ______ transistor and a high resistance reading would indicate a _______ transistor.

A) npn, pnp
B) pnp, npn
C) npn, npn
D) pnp, pnp

A

A) npn, pnp

59
Q

The leads of a transistor are typically made of

A) gold
B) aluminum
C) nickel
D) All of the above

A

B) aluminum

60
Q

There is(are) _______ in the internal construction of a TO-92 package.

A) gold bond wires
B) a copper frame
C) epoxy encapsulation
D) All of the above

A

D) All of the above

ece (5 decks)

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