Overall Review Flashcards

(31 cards)

1
Q

Invented the first practical electron tube called the ‘fleming valve’

A

John Ambrose Fleming

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2
Q

AKA Electron tube
It is a sealed glass or metal-ceramic enclosure used in electron circuitry to control the flow of electrons between the metal electrodes sealed inside the tubes

A

Vacuum Tubes

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3
Q

Came into its own invention of the transistor in 1947

A

Solid state device

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4
Q

The opposite of vacuum technology, which depended on the continuous and free flow of electrons

A

Solid state

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5
Q

Classes of solid-state materials:

A
  1. Insulator
  2. Semiconductors
  3. Conductors
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6
Q

Materials that permit electrons to flow freely

A

Conductors

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7
Q

Materials that impede the flow of electrons

A

Insulators

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8
Q

Materials that are neither a good conductor or a good insulator; when the temperature is low, it acts as an insulator

A

Semiconductors

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9
Q

An electric circuit component from a material that is neither a good conductor or a good insulator

A

Semi-conductor devices

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10
Q

Major semi-conductor material

A

Germanium

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11
Q

Modern day semiconductor devices

A
  1. transistors
  2. resistors
  3. ICs
  4. operational amplifier / 143
  5. diodes
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12
Q

Types of semiconductors

A
  1. P-type (carries the current as the charged holes move)

2. N-type (carries are negative)

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13
Q

Resists the flow of the current

A

Resistors

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14
Q

Provides the first digit of the code

A

1st band

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15
Q

Provides the second digit of the code

A

2nd band

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16
Q

Provides the multiplier of the code

17
Q

Indicates the tolerance value

18
Q

Stores an electric charge between two plates

19
Q

Unit of the capacitors

20
Q

The materials between the plates of the capacitor

A

Dielectric material

21
Q

REMINDERS

A
  • Electrons on the left plate are attracted towards the positive terminal of the voltage source
  • Electrons are pushed towards the right plate
  • Excess electrons leaves a negative charge
22
Q

Device that lets current pass only in one direction

23
Q

Two leads of the diode

A

ANODE (POSITIVE) and CATHODE (NEGATIVE)

24
Q

The interface b/w p and n type

A

Pn-junction (Junction)

25
A barrier b/w the p and n type silicon that contains no free electrons of holes
Depletion zone
26
The condition that permits current through the pn-junction of the diode
Forward bias
27
The condition where the depletion zone widens until its potential difference equals the bias voltage, majority-carrier current ceases
Reverse bias
28
Process of adding extra electrons
Doping (BTS nyehehehhe)
29
Process of adding holes
Doped with "holes"
30
Designed to pass electrons from the emitter to the collector
NPN BJT Transistor
31
Designed to pass electrons from the emitter to the collector that flows in the opposite direction; the emitter emits "holes" which are collected by the collector
PNP BJT Transistor