Solid State Devices (Boylestad) Flashcards

(44 cards)

1
Q

Are a special class of elements having a conductivity between that of a good conductor and that of an insulator

A

Semiconductor

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2
Q

Two classes of semiconductor materials

A

Single-Crystal
Compound

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3
Q

Are semiconductors that have a repetitive single crystal structure

A

Single-Crystal Semiconductors

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4
Q

Are semiconductors that are constructed from two or more semiconductor materials of different atomic structures

A

Compound Semiconductors

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5
Q

What are the three most used semiconductors in the construction of electronic devices

A

Si, Ge, GaAs

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6
Q

What do you call the electrons found at the outermost shell of an element?

A

Valence Electrons

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7
Q

What do you call atoms that have three valence electrons

A

Trivalent

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8
Q

What do you call atoms that have four valence electrons

A

Tetravalent

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9
Q

What do you call atoms that have five valence electrons

A

Pentavalent

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10
Q

It is the term used to indicate that the potential required to remove any one of these electrons from the atomic structure is significantly lower than that required for any other electron in the structure

A

Valence

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11
Q

What do you call the type of bonding strengthened by the sharing of electrons

A

Covalent Bonding

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12
Q

Is an electron that has separated from the fixed lattice structure and is very sensitive to any applied electric fields

A

Free Electron

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13
Q

How many free carriers are there in a 1cm^3 of intrinsic silicon material at room temperature?

A

15 billion or 1.5x10^10

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14
Q

Refers to any semiconductor material that has been carefully refined to reduce the number of impurities to a very low level

A

Intrinsic

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15
Q

The free electrons in a material due only to external causes are referred to as ____.

A

Intrinsic Carriers

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16
Q

It is the ability of the free carriers to move throughout the material

A

Relative Mobility (μn)

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17
Q

What is the number of intrinsic carriers per cubic cm of Gallium Arsenide?

A

1.7x10^6

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18
Q

What is the number of intrinsic carriers per cubic cm of Germanium?

19
Q

What is the relative mobility factor of Silicon?

20
Q

What is the relative mobility factor of Germanium?

21
Q

What is the relative mobility factor of Gallium Arsenide?

22
Q

It is the ability to change the characteristics of a material

23
Q

What happens to the resistance of conductors when there is an increase in heat?

A

Resistance Increases

24
Q

The temperature coefficient of semiconductors are always ____

25
Is the energy state of an electron higher when it is closer or farther from the nucleus?
Farther
26
What do you call the energy required for electrons and holes to transition from the valence band to the conduction band?
Band Gap
27
It is what's needed by the electron in the valence band to overcome to become a free carrier
Band Gap
28
How many joules are there in 1 eV?
1.6x10^-19 J
29
What is the band gap of Silicon?
1.12 eV
30
What is the band gap of Germanium?
0.67 eV
31
What is the band gap of Gallium Arsenide?
1.42 eV
32
It is the term used for the base material in the construction of solid-state electronics devices
Substrate
33
It is a semiconductor that has been subjected to the doping process
Extrinsic
34
What are the two types of extrinsic materials?
n-type and p-type
35
It is created by introducing impurity elements that have five valence electrons
n-type material
36
These are diffused impurities with five valence electrons
Donor Atoms
37
The resulting vacancy in a newly formed lattice from an insufficient number of electrons
Holes
38
There are diffused impurities with three valence electrons
Acceptor Atoms
39
The direction in which its indicated by the direction of hole flow is called ____
Conventional Flow
40
What is the majority carrier in an n-type material
Electrons
41
What is the minority carrier in an n-type material
Holes
42
What is the majority carrier of a p-type material
Holes
43
What is the minority carrier of a p-type material
Electrons
44
They represent the basic building blocks of semiconductor devices
n-type and p-type materials