Flynn Lectures Flashcards
(99 cards)
Ohm’s Law
V=IR
resistance of membrane (R)
ion channels act as a resistor in circuit surrounding membrane, if no ion channels are present, resistance is infinite
current (A) of membrane
measured if movement of charge across membrane
capacitance (C)
C=q/V (measures the amount of charge that can build up around the membrane
capacitor properties
can hold a charge equal to that of the input voltage (Coulomb’s Law = capacitor has a maximum voltage), charging delay
time constant (tau)
time taken to reach 63% of maximum voltage, a quality of the membrane that describes how quickly membrane potential will change when charge is introduced
how to calculate tau time constant?
t = RC (R = membrane resistance, C = membrane capacitance)
membrane capacitance is affected by:
size of conductive plates (intracellular vs extracellular fluid), distance between plates (better capacitor if plates closer together), insulator constant
membrane resistance is affected by:
number of ion channels in the membrane
length constant (lambda)
distance charges move to acquire 37% of maximum voltage
how to calculate length constant?
lambda = sqrt [ Rm / (Ri + Ro) ] (Rm = membrane resistance, Ri = axial resistance, Ro = 0) lambda = sqrt [Rm/Ri]
what is membrane resistance Rm?
due to ion channels, greater membrane resistance = less ion channels (charges can move further down axon, larger length constant)
what is axial resistance Ri?
internal resistance caused by stuff inside the axon that opposes the movement of ions/charges down the axon, larger axial resistance = harder to charges to move = lower length constant
what resistance does diameter affect?
axial resistance, larger diameter = lower axial resistance
what are passive electrical properties?
- time delayed change in membrane potential (time constant tau)
- distance degradation (length constant lambda)
- summation (temporal/spatial)
describe the structure of voltage-gated sodium channels
four domains consisting of six membrane spanning segments, fourth mss is voltage-sensitive, has 4 P loops (pore-forming loops on intracellular side)
describe the structure of voltage-gated potassium channels
one domain consisting of 6 mss, 1 P loop, selective for potassium because of position of charged amino acid residues to interact with hydration shell of K+ ion specifically
what causes relative and absolute refractory periods?
- inactivation of sodium channels
- increased potassium permeability
- decreased membrane resistance (V=IR, R decreases means more I is required to reach V)
what determines conduction velocity?
1) axon diameter (increase in diameter = greater decrease in Ri than decrease in Rm, length constant increases and thus conduction velocity increases)
2) myelination (increased Rm = increased length constant = increased conduction velocity)
3) temperature (channels change shape more easily at warmer temperatures)
what are the steps of neurotransmitter release?
1) targeting (vesicles filled up with NT are mobilized from stores and moved toward axon terminals)
2) docking (irreversible, will go through exocytosis, when vesicle first makes contact with presynaptic membrane)
3) priming (requires protein structures, formation of V-snare T-snare complex)
4) fusion/exocytosis (vesicle membrane incorporated into presynaptic membrane)
5) endocytosis (recycles membrane to create new vesicles)
classical neurotransmitter release
requires endocytosis to form new vesicles
kiss and run
vesicle barely opens and is continually re-used (involves different proteins
what types of proteins are on the vesicle?
V-snares, which are involved in fusion (e.g. synaptotagmin)
what types of proteins are on the postsynaptic membrane?
t-snares