SEMITIP V6, program UniInt2
Introduction
This program computes the electrostatic potential and the resulting tunnel current between a metallic tip and a uniform (homogeneous) semiconducting sample, for a 3dimensional geometry with azimuthal symmetry. The tunnel current is computed by integrating the Schrödinger equation along the central axis of the problem (i.e. as appropriate for a planar geometry, but an approximation for a nonplanar geometry).
Version information
Version 6.7; see top of
UniInt26.7.f
source code for prior version information.
Usage
A compiled version of the code, which should run on any Windows PC, is
available in the file UniInt2.exe.
Input for the executable code comes from the file FORT.9.
Download these two files, into filenames "UniInt2.exe" and "fort.9". Then, run the code just by double clicking on it.
Using a text editor, the input parameters in FORT.9 can be changed to whatever values are desired. In addition to the parameter values,
this file also contains comments as to the meaning of each parameter. See
SEMITIP V6 Technical Manual
for additional comments on the meaning of the parameters.
Output
Output from the program is contained in the following files
(output depends on the value of the output parameter IWRIT as specified
in the input file FORT.9):
 FORT.10  gives the numerical results for the following quantities:
 tip radius of curvature (nm)
 tipsample separation (nm)
 sampletip bias voltage (V)
 contact potential (eV)
 Pot0  the surface potential at a point directly opposite the tip apex (eV)
 FORT.11  provides the potential (eV) along the central axis, as a
function of zdistance (output for IWRIT>=1). Also, for IWRIT>=2, the electrostatic potential plus the vacuum barrier energy is output to FORT.95, and the energy of the valence and conduction band edges (as used in computing the tunnel current) are output to FORT.96 and FORT.97, respectively.
 FORT.12  provides the potential (eV) along the surface, as a function
of the radial distance from the central axis (output for IWRIT>=1)
 FORT.13  gives the entire array of potential values (eV) (output for IWRIT>=3); see
VERSION 6 Technical Manual
for more details.
 FORT.14  provides the current (A/nm^2) (column 2) as a function of sample voltage (V) (column 1). Also, columns 3 and 4 provide the contributions to the current of extended states and
localized states, respectively. Separate contributions from the valence band and conduction band
go in to FORT.91 and FORT.92, respectively.
 FORT.15  provides the conductance dI/dV (A/(V nm^2)) (column 2) as a function of sample voltage (V) (column 1). Also, columns 3 and 4 provide the contributions to the conductance of extended states and
localized states, respectively. Separate contributions from the valence band and conduction band
go in to FORT.93 and FORT.94, respectively.
 FORT.16  gives an exact copy of the output to the console
 FORT.17  provides the charge densities on the central axis (column 2) as a function of zdistance along the central axis (column 1). Also, columns 3 and 4 provide the contributions to the charge densities of extended states and localized states, respectively.
 FORT.18  provides the surface charge densities (column 2) as a function of radial distance away from the central axis (column 1). Also, columns 3 and 4 provide the contributions to the charge densities of extended states and localized states, respectively.
 FORT.19  provides the surface charge density (column 2) at the point opposite the tip apex (i.e. on the central axis), as a function of bias voltage. Also, columns 3 and 4 provide the contributions to the charge densities of extended states and localized states, respectively.
 FORT.20, FORT.21, ...  contour lines (nm) of the potential (output for IWRIT>=2)
 FORT.71,FORT.72  Contain values for the potential through the vacuum region, before and after, respectively, the inclusion of the image potential term, as a function of distance along the central axis (output for IWRIT>=3). The values provided are for an expanded number of zpoints, as appropriate for computation of tunnel currents by integration of Schrödinger's equation.
 FORT.81, FORT.82,...  listing of surface charge density (column 2) vs. Fermi energy (column 1), for various areas (output for IWRITE>=3)
All of the parameters in the program can be varied using the input file FORT.9, with the exception of the array sizes, the specification of a surface state density other than a uniform or Gaussian shaped one, and the specification of spatial arrangement of bulk or surface charge density. See
SEMITIP V6 Technical Manual
for additional information on these userdefined functions. Modification of those functions
can be accomplished by changing the source code of the program. The source code is available, in the following files (version numbers follow the dash in the names):

UniInt26.7.f 
main routine.

contr26.0.f 
routine for outputting contour plot.

gsect6.0.f 
general purpose Golden Section search routine, for dealing with nonlinear aspects of the problem.

intcurr6.2.f 
performs numerical integration of Schrödinger equation, on a potential curve supplied by potexpand.

potcut26.0.f 
takes a cut along the the central axis (r=0) of the potential from semitip2.

potexpand6.1.f 
expands the cut of the potential from potcut2, to a resolution suitable for numerical integration. Separate routines are contained in this file for handling the
vacuum and semiconductor parts of the potential.

semirho6.0.f 
routines for computing semiconductor charge densities.

semitip26.1.f 
performs the detailed finite element solution of Poisson's equation.

surfrho6.2.f 
routines for handling surface charge densities.
All routines are written in Fortran. The source code can be downloaded
directly from the above locations, and it can be compiled and linked
on any platform. Sample input and output from the program is shown in the examples below.
Illustrative Examples of Running the Code

ntype GaAs(110), with intrinsic surface states.

ntype GaAs(110), with a positive contact potential between tip and sample.

ntype GaAs(110), with extrinsic surface states.

plotting wavefunctions for localized states.

ntype GaAs(110), with intrinsic surface states and including image potential.