lesson 9 Flashcards

(20 cards)

1
Q

: Which type of memory provides the fastest access time?

  • A) DRAM
  • B) SRAM
  • C) Flash memory
  • D) Hard disk
A

B) SRAM

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2
Q

What is the primary difference between SRAM and DRAM?

  • A) SRAM is non-volatile while DRAM is volatile
  • B) SRAM uses capacitors while DRAM uses flip-flops
  • C) SRAM does not need refreshing while DRAM requires periodic refreshing
  • D) SRAM is slower but has higher capacity than DRAM
A

C) SRAM does not need refreshing while DRAM requires periodic refreshing

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3
Q

Which of the following is a non-volatile memory?

  • A) DRAM
  • B) SRAM
  • C) ROM
  • D) Cache memory
A

C) ROM

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4
Q

What is memory interleaving?

  • A) A technique to increase memory capacity
  • B) A technique to organize memory into multiple banks that can be accessed simultaneously
  • C) A technique to reduce power consumption
  • D) A technique to improve error detection
A

B) A technique to organize memory into multiple banks that can be accessed simultaneously

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5
Q

Which of the following is NOT a type of ROM?

  • A) PROM
  • B) EPROM
  • C) EEPROM
  • D) SDROM
A

D) SDROM

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6
Q

What is the purpose of refresh operations in DRAM?

  • A) To increase access speed
  • B) To maintain data integrity by recharging capacitors
  • C) To clear memory for new data
  • D) To reduce power consumption
A

B) To maintain data integrity by recharging capacitors

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7
Q

Which of the following best describes DDR SDRAM?

  • A) Memory that transfers data on both the rising and falling edges of the clock signal
  • B) Memory that uses dual data registers
  • C) Memory that has double the capacity of regular SDRAM
  • D) Memory that operates at twice the voltage of regular SDRAM
A

A) Memory that transfers data on both the rising and falling edges of the clock signal

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8
Q

What is the primary advantage of flash memory over EEPROM?

  • A) Non-volatility
  • B) Higher capacity and faster erase/write operations
  • C) Lower power consumption
  • D) Better reliability
A

B) Higher capacity and faster erase/write operations

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9
Q

Which error detection method can detect but not correct errors?

  • A) Parity checking
  • B) Hamming code
  • C) Reed-Solomon code
  • D) ECC memory
A

A) Parity checking

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10
Q

What is the primary disadvantage of SRAM compared to DRAM?

- A) Slower access time
- B) Higher power consumption
- C) Lower density (fewer bits per chip)
- D) Requires refresh operations
A

C) Lower density (fewer bits per chip)

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11
Q

: Which of the following is a characteristic of synchronous DRAM (SDRAM)?

- A) It operates independently of the system clock
- B) It synchronizes its operation with the system clock
- C) It does not require refresh operations
- D) It has lower capacity than asynchronous DRAM
A

B) It synchronizes its operation with the system clock

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12
Q

What is the purpose of Error-Correcting Code (ECC) memory?

- A) To increase memory capacity
- B) To detect and correct memory errors
- C) To improve memory access time
- D) To reduce power consumption
A

B) To detect and correct memory errors

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13
Q

: Which of the following is NOT a characteristic of flash memory?

- A) Non-volatile
- B) Electrically erasable
- C) Requires refresh operations
- D) Can be erased in blocks
A

C) Requires refresh operations

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14
Q

: What is the primary advantage of memory interleaving?

- A) Increased memory capacity
- B) Improved memory bandwidth
- C) Reduced power consumption
- D) Enhanced error detection
A

B) Improved memory bandwidth

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15
Q

Which of the following best describes the organization of a memory chip with dimensions 1M × 8?

- A) 1 million words of 8 bits each
- B) 8 million words of 1 bit each
- C) 1 million chips with 8 bits each
- D) 8 bits organized in 1 million rows
A

A) 1 million words of 8 bits each

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16
Q

: What is the primary limitation of PROM (Programmable Read-Only Memory)?

- A) It cannot be programmed by the user
- B) It can be programmed only once
- C) It requires special voltage for programming
- D) It has very low capacity
A

: B) It can be programmed only once

17
Q

: Which of the following memory types uses floating-gate transistors?

- A) DRAM
- B) SRAM
- C) Flash memory
- D) Magnetic RAM
A

C) Flash memory

18
Q

What is the cycle time of a memory?

- A) The time required to complete a read operation
- B) The time required to complete a write operation
- C) The minimum time between the start of two successive memory operations
- D) The time required to refresh the entire memory
A

: C) The minimum time between the start of two successive memory operations

19
Q

Which of the following is a characteristic of MRAM (Magnetoresistive RAM)?

- A) Uses electric charge to store data
- B) Requires refresh operations
- C) Non-volatile with unlimited write endurance
- D) Slower than DRAM
A

C) Non-volatile with unlimited write endurance

20
Q

What is the primary advantage of 3D XPoint memory?

- A) Highest capacity among all memory types
- B) Lowest cost per bit
- C) Combines high density, non-volatility, and speed
- D) Lowest power consumption
A

C) Combines high density, non-volatility, and speed