semicon & diodes Flashcards by XYRA Unknown

Intrinsic semiconductor material is characterized by a valence shell of how many electrons?
1
2
4
6

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Ionization within a P-N junction causes a layer on each side of the barrier called the:
junction
depletion region
barrier voltage
forward voltage

depletion region

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What is the most significant development in electronics since World War II?
the development of color TV
the development of the diode
the development of the transistor
the development of the TRIAC

the development of the transistor

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What causes the depletion region?
doping
diffusion
barrier potential
ions

diffusion

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What is an energy gap?
the space between two orbital shells
the energy equal to the energy acquired by an electron passing a 1 V electric field
the energy band in which electrons can move freely
an energy level at which an electron can exist

the space between two orbital shells

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Silicon atoms combine into an orderly pattern called a:
covalent bond
crystal
semiconductor
valence orbit

crystal

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In “n” type material, majority carriers would be:
holes
dopants
slower
electrons

electrons

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Elements with 1, 2, or 3 valence electrons usually make excellent:
conductors
semiconductors
insulators
neutral

conductors

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A commonly used pentavalent material is:
arsenic
boron
gallium
neon

arsenic

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Which material may also be considered a semiconductor element?
carbon
ceramic
mica
argon

carbon

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In “p” type material, minority carriers would be:
holes
dopants
slower
electrons

electrons

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What can a semiconductor sense?
magnetism
temperature
pressure
all of the above

all of the above

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When an electron jumps from the valence shell to the conduction band, it leaves a gap. What is this gap called?
energy gap
hole
electron-hole pair
recombination

hole

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Forward bias of a silicon P-N junction will produce a barrier voltage of approximately how many volts?
0.2
0.3
0.7
0.8

0.7

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Which semiconductor material is made from coal ash?
germanium
silicon
tin
carbon

germanium

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When and who discovered that more than one transistor could be constructed on a single piece of semiconductor material:
1949, William Schockley
1955, Walter Bratten
1959, Robert Noyce
1960, John Bardeen

1959, Robert Noyce

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When is a P-N junction formed?
in a depletion region
in a large reverse biased region
the point at which two opposite doped materials come together
whenever there is a forward voltage drop

the point at which two opposite doped materials come together

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A P-N junction mimics a closed switch when it:
has a low junction resistance
is reverse biased
cannot overcome its barrier voltage
has a wide depletion region

has a low junction resistance

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Solid state devices were first manufactured during:
World War 2
1904
1907
1960

1960

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Electron pair bonding occurs when atoms:
lack electrons
share holes
lack holes
share electrons

share electrons

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How many valence electrons are in every semiconductor material?
1
2
3
4

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What is a type of doping material?
extrinsic semiconductor material
pentavalent material
n-type semiconductor
majority carriers

pentavalent material

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Minority carriers are many times activated by:
heat
pressure
dopants
forward bias

heat

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What is the voltage across R1 if the P-N junction is made of silicon?

12 V
11.7 V
11.3 V
0 V

11.3 V

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If conductance increases as temperature increases, this is known as a: positive coefficient negative current flow negative coefficient positive resistance

negative coefficient

Which of the following cannot actually move? majority carriers ions holes free electrons

ions

What electrical characteristic of intrinsic semiconductor material is controlled by the addition of impurities? conductivity resistance power all of the above

Conductivity

What is a varistor? a voltage-dependent resistor a voltage-dependent diode a current-dependent resistor a current-dependent diode

a voltage-dependent resistor

Which type of transformer is required to create a 180 degree input to a rectifier? center-tapped secondary step-down secondary stepped-up secondary split winding primary

center-tapped secondary

What circuit activity may shift a characteristic curve so that diode operating points are different? higher power (heat) higher resistance lower voltage lower current

higher power (heat)

The dc current through each diode in a bridge rectifier equals: the load current half the dc load current twice the dc load current one-fourth the dc load current

the load current

When matching polarity connections have been made and the potential difference (PD) is above 0.7 V, the diode is considered to be: not working forward biased reverse biased an open switch

forward biased

In a power supply diagram, which block indicates a smooth dc output? transformer filter rectifier regulator

regulator

The characteristic curve for the complex model of a silicon diode shows that the barrier potential is 0 V the barrier potential stays fixed at 0.7 V the barrier potential increases slightly with an increase in current the barrier potential decreases slightly with an increase in current

the barrier potential increases slightly with an increase in current

Since diodes are destroyed by excessive current, circuits must have: higher voltage sources current limiting resistors more dopants higher current sources

current limiting resistors

A diode for which you can change the reverse bias, and thus vary the capacitance is called a varactor diode tunnel diode zener diode switching diode

varactor diode

A filtered full-wave rectifier voltage has a smaller ripple than does a half-wave rectifier voltage for the same load resistance and capacitor values because: there is a shorter time between peaks there is a longer time between peaks the larger the ripple, the better the filtering action none of the above

there is a shorter time between peaks

Testing a good diode with an ohmmeter should indicate high resistance when forward or reverse biased low resistance when forward or reverse biased high resistance when reverse biased and low resistance when forward biased high resistance when forward biased and low resistance when reverse biased

high resistance when reverse biased and low resistance when forward biased

The peak inverse voltage (PIV) across a nonconducting diode in a bridge rectifier equals approximately: half the peak secondary voltage twice the peak secondary voltage the peak value of the secondary voltage four times the peak value of the secondary voltage

the peak value of the secondary voltage

Electrons in the outermost orbit or shell of an atom are called free electrons negative ions valence electrons conduction band electrons

valence electrons

Shunting the ac component away from the load is the task of a: transformer filter regulator rectifier

filter

A pn junction allows current flow when the p-type material is more positive than the n-type material the n-type material is more positive than the p-type material both the n-type and p-type materials have the same potential there is no potential on the n-type or p-type materials

the p-type material is more positive than the n-type material

When a diode is forward biased, the voltage across it is directly proportional to the current is inversely proportional to the current is directly proportional to the source voltage remains approximately the same

remains approximately the same

Why is heat produced in a diode? due to current passing through the diode due to voltage across the diode due to the power rating of the diode due to the PN junction of the diode

due to current passing through the diode

The arrow in the schematic symbol of a diode points to the n-type material, which is called the anode the n-type material, which is called the cathode the p-type material, which is called the anode the p-type material, which is called the cathode

the p-type material, which is called the anode

The diode schematic arrow points to the: trivalent-doped material positive axial lead anode lead cathode lead

cathode lead

When checking a diode, low resistance readings both ways indicate the diode is: open satisfactory faulty not the problem

faulty

In a diode schematic, the anode is represented by a(n): triangle vertical line zig-zag line element indicator

triangle

An IC regulator receives an overload; it will: shut down compensate for heat provide more voltage sample and adjust

shut down

With full-wave rectification, current through the load resistor must be: in opposite directions to the external load from the reverse biased diode in the same direction

in the same direction

A characteristic curve is the result of a current versus voltage plot of diode activity, which begins at the: 3rd quadrant current plot graph origin voltage plot

graph origin

Rectifier output polarity depends upon: cycles of input capacitor polarity half or full wave diode installation

diode installation

If the frequency of the applied ac signal to a half-wave rectifier is 60 Hz, the frequency of the pulsating dc output will be 30 pps 60 pps 90 pps 120 pps

60 pps

Thermal shutdown occurs in an IC regulator if: power dissipation is too high internal temperature is too high current through the device is too high load resistance increases

internal temperature is too high

The conduction band is closest to the valence band in semiconductors conductors insulators The distance is the same for all of the above.

semiconductors

With a half-wave rectified voltage across the load resistor, load current flows for what part of a cycle? 0 degrees 90 degrees 180 degrees 360 degrees

180 degrees

Which of the following circuits would require the least amount of filtering? A half-wave rectifier A full-wave rectifier A bridge rectifier A full-wave rectifier and a bridge rectifier

A full-wave rectifier and a bridge rectifier

The voltage where current may start to flow in a reverse-biased pn junction is called the breakdown voltage barrier potential forward voltage biasing voltage

breakdown voltage

Providing a constant output regardless of ac input or load resistance changes is the function of a: transformer filter regulator rectifier

regulator

When a diode is destroyed it has infinite impedance. When damaged by heat it will probably: short conduct more conduct less open

short

The area at the junction of p-type and n-type materials that has lost its majority carriers is called the barrier potential depletion region n region p region

depletion region

DC power should be connected to forward bias a diode as follows: – anode, + cathode – cathode, – anode + anode, – cathode + cathode, + anode

+ anode, – cathode

At any given time in an intrinsic piece of semiconductor material at room temperature electrons drift randomly recombination occurs holes are created All of the above

All of the above

In a power supply diagram, which block indicates a pulsating dc output? transformer filter rectifier regulator

rectifier

List three diode packages: clip package, DIP, small current package DIP, small current package, large current package small current package, large current package, and SIP small current package, large current package, clip package

small current package, large current package, clip package

The mimicking of an open/closed switch by a diode allows alternating current to be: rectified regulated controlled attenuated

rectified

semicon & diodes Flashcards

(66 cards)